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Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
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2D WSe2-MoSe2异构结构的无障碍载体注入通过费米级分层

Tian-Jun Dai1, Xiang Xiao1, Zhong-Yuan Fan1

  • 1School of Electronic Information Engineering, Guiyang University, Guiyang 550005, China.

Nanomaterials (Basel, Switzerland)
|July 12, 2025
PubMed
概括

研究人员开发了一种方法来克服二维过渡金属二二基因化物 (TMDC) 异构结构中的费米级固定. 引入金属合层显著降低了Schottky屏障高度,使先进电子设备具有超低接触电阻.

关键词:
费米级别的固定方式斯科特基屏障的高度是WSe2-MoSe2 异构结构的异构结构缓冲层是一个缓冲层.载体注入效率的提高是因为载体注入效率.

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