Sol-GelAl-doped ZnO

Dabin Jeon1, Seung Hun Lee1, Sung-Nam Lee1,2

  • 1Department of IT & Semiconductor Convergence Engineering, Tech University of Korea, Siheung 15073, Republic of Korea.

PubMed
概括

为光电子突触器件制造了化ZnO (AZO) 薄膜. 优化2.0重%的Al兴奋剂增强了设备的记忆保留和神经形态计算的性能.

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