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Updated: Sep 15, 2025

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通过BLA-PrL电路通过脱氧尼瓦伦醇调解的记忆障碍

Liu-Nan Yang1, Tongxia Li2, Yan Liu3

  • 1Department of Nutrition and Food Hygiene, Hubei Key Laboratory of Food Nutrition and Safety, Tongji Medical College, Huazhong University of Science and Technology, Hangkong Road 13, Wuhan 430030, China; Department of Infectious Diseases, Tongji Hospital, Tongji Medical College and State Key Laboratory for Diagnosis and Treatment of Severe Zoonotic Infectious Disease, Huazhong University of Science and Technology, Hangkong Road 13, Wuhan 430030, China; Department of Nutrition and Food Hygiene and MOE Key Lab of Environment and Health, School of Public Health, Tongji Medical College, Huazhong University of Science and Technology, Hangkong Road 13, Wuhan 430030, China; NHC Specialty Laboratory of Food Safety Risk Assessment and Standard Development, Hangkong Road 13, Wuhan 430030, China.

Journal of hazardous materials
|July 12, 2025
PubMed
概括

脱氧尼瓦伦醇 (DON) 暴露会通过改变大脑电路来损害记忆和空间学习. 激活特定的神经通路并准神经氨酸合成酶2 (SMS2) 可能会减轻这些认知缺陷.

关键词:
底侧桃体 (BLA) 是一个脱氧尼瓦伦醇 (DON) 是一种葡萄糖质的投射物.记忆障碍 记忆障碍 记忆障碍临界前皮层 (PrL)空间代谢学空间代谢学

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