相关实验视频

Updated: Jul 29, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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制造2D MoS2与边缘硫空缺缺陷通过重离子轰炸剪切-剥皮增强存储的 2D MoS2

Feiyan Mu1, Siqi Li1, Dongqi Zhang1

  • 1Advanced Energy Storage Materials and Technology Research Center, Guangdong-Hong Kong Joint Laboratory for Carbon Neutrality, Jiangmen Laboratory of Carbon Science and Technology, Jiangmen, 529199, China.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|July 15, 2025
PubMed
概括

一种新的,节能的方法合成二维二硫化物 (MoS2) 与硫空缺的离子电池. 这种空缺工程MoS2表现出卓越的性能,为先进的电池开发提供了一个有前途的途径.

关键词:
这里是S-空缺.金属离子辅助的金属离子剪切剥离 剥离 剪切剥离在离子电池中使用.

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...