在区域选择性原子层沉积中爆发核化.
Chun Li1,2, Jiaxun Yao2, Jiayi Xu2
1Harbin Institute of Technology, Harbin 150080, China.
ACS applied materials & interfaces
|July 15, 2025
概括
我们发现了在区域选择性原子层沉积 (AS-ALD) 中的爆发核化现象,使用的是 perfluoroalkyl 自组装单层 (SAM). 这种方法可以轻松地从非目标区域去除沉积物质,显著提高AS-ALD的选择性.
科学领域:
- 材料科学 材料科学 材料科学
- 表面化学 表面化学
- 纳米技术 纳米技术
背景情况:
- 区域选择性原子层沉积 (AS-ALD) 对于制造先进的微电子设备至关重要.
- 在AS-ALD中实现高选择性依赖于控制目标和非目标表面的核化行为.
- 目前的方法往往难以从非目标区域完全去除材料,从而限制了整体工艺效率.
研究的目的:
- 研究一种新的核化控制策略,以提高AS-ALD的选择性.
- 为了探讨在 perfluoroalkyl 自组装单层 (SAM) 处理的表面上爆裂核化的现象.
- 为了证明这种策略对各种材料和基板的有效性.
主要方法:
- 使用甲基自我组装单层 (SAM) 来修改AS-ALD的表面特性.
- 通过改变SAM链长,ALD前体和温度来研究核化行为.
- 使用Cu/SiO2基板上Al2O3的原子层沉积 (ALD) 和特征颗粒粘附的量化选择性.
主要成果:
- 观察到 perfluoroalkyl SAM 处理的表面上的"爆裂核化"现象,导致不连续的和弱粘附的粒子在非目标区域.
- 证明这些粘附较弱的颗粒可以通过轻轻擦去轻松地去除,而不会损坏目标区域的ALD膜.
- 在30个循环后,在Cu/SiO2上实现了99.9%的Al2O3ALD选择性,这与传统的基SAM相比显著改善 (52.2%的选择性).
结论:
- 在 perfluoroalkyl SAMs 上进行突发核化,为控制 AS-ALD 选择性提供了一种有效的策略.
- 这种方法可以在后处理过程中轻松地从非目标区域中去除材料,从而提高制造精度.
- 爆裂核化策略广泛适用于各种氧化物和聚合物材料,用于先进的AS-ALD应用.
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