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Updated: Sep 15, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Published on: November 28, 2017

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硫空位分布在MoS2单层电荷传输上的影响:量子力学研究

Hanna Kuperman Benedik1, Naomi Rom1, Maytal Caspary Toroker1

  • 1Department of Materials Science and Engineering, The Nancy and Stephen Grand Technion Energy Program, The Resnick Sustainability Center for Catalysis, Technion-Israel Institute of Technology, Haifa 3200003, Israel.

ACS materials Au
|July 16, 2025
PubMed
概括

二硫化物 (MoS2) 单层中的缺陷,特别是硫空缺,显著增加了电子流. 将这些空位安排在交替的线路中,可以优化未来电子设备的导电性.

关键词:
一个单层的MoS2单层.缺陷的分布是缺陷的分布.密度函数理论密度函数理论设计实验的设计.电子导电性的电子导电性.没有平衡 格林的功能.在硫空缺的职位.

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