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Updated: May 13, 2026

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
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Published on: December 4, 2014

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平面缺陷层模板一个高压InBi多态

Eric A Riesel1, Zhenyao Fang2, Douglas H Fabini1

  • 1Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.

Journal of the American Chemical Society
|July 16, 2025
PubMed
概括

高压研究揭示了- (InBi) 材料的独特平面缺陷,挑战了以前的结构模型,并解释了压力下的超导特性.

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