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Updated: Sep 15, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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增强了耐NBTI双模式施密特触发电路的软错误适应性

Aryan Kannaujiya1, Ambika Prasad Shah2

  • 1IC-ResQ Lab, Department of Electrical Engineering, Indian Institute of Technology Jammu, Jammu, J&K, 181221, India.

Scientific reports
|July 16, 2025
PubMed
概括

一个新的双模式逆转施密特触发器 (DM-IST) 电路显著提高了可靠性和性能. 这种设计提供了更好的防噪能力和长期稳定性,特别是在辐射严重的环境中.

关键词:
衰老的影响 衰老效应这是一个CMOS系统.在这里,NBTI是NBTI.噪音免疫力 噪音免疫力施密特的触发器触发器软错误是一个软错误.

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