Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

Types of Semiconductors01:20

Types of Semiconductors

929
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
929

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Fractional high-Chern insulator in twisted rhombohedral graphene.

Nature·2026
Same author

Wafer-scale growth of highly stable p-type semiconducting monolayer MoSi<sub>2</sub>N<sub>4</sub> single crystals.

Nature materials·2026
Same author

Monolithic Integration of Carbon Nanotube-Based Complementary Field-Effect Transistors with 3D-Stacked Photodiodes for Unified Sensing and Computing.

ACS nano·2026
Same author

Probing picometre-scale interlayer deformations via hyperbolic polaritons.

Nature·2026
Same author

Two-Dimensional Semiconductors for Postsilicon Electronics: From Transistors to Integrated Circuits.

ACS nano·2026
Same author

Ultrabroadband Silicon-Based Infrared Detectors by Integrating with Multilayer Graphene.

ACS applied materials & interfaces·2026

相关实验视频

Updated: Sep 15, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.8K

用于集成电子的二维化晶片

Biao Qin1,2, Jianfeng Jiang3, Lu Wang4

  • 1State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.

Science (New York, N.Y.)
|July 17, 2025
PubMed
概括

研究人员开发了一种新的固体-液体-固体方法,以创建高质量的二维 (2D) 化晶片. 在二维半导体制造领域的这一突破为下一代电子产品实现了卓越的电子性能.

更多相关视频

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.9K
Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.3K

相关实验视频

Last Updated: Sep 15, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.8K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.9K
Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.3K

科学领域:

  • 材料科学
  • 凝聚物质物理学
  • 纳米技术

背景情况:

  • 由于其优良的电子特性,二维 (2D) 化物对先进电子具有前景.
  • 现有的二维化薄膜生长方法无法与剥皮薄膜的性能相匹配.

研究的目的:

  • 开发一种可扩展的方法来生产高性能的二维化薄膜.
  • 克服当前二维半导体制造技术的局限性.

主要方法:

  • 使用固体-液体-固体策略来转换无形化薄膜.
  • 创建了一个富含的液体接口,保持精确的1:1与结石度.
  • 这一过程导致了纯相,高晶度的化晶片在~5厘米的基板上.

主要成果:

  • 制造的化薄膜显示出异常的均性,相纯度和高晶度.
  • 在这些晶圆上制造的晶体管阵列与其他二维膜设备相比,具有更高的电子性能.
  • 关键性能指标包括平均移动性为287cm2/Vs,在室温下下降值为67mV/十年.

结论:

  • 固体-液体-固体方法可生产适用于高性能电子应用的高质量二维化晶片.
  • 这种进步为二维半导体铺平了道路,
  • 实现的电子特性代表了基于二维材料的设备工程的重大进步.