对WOx和MoOx薄膜的缺陷密度分析,这些薄膜是通过脉冲激光沉积生长的,用于异质连接太阳能电池应用
Daniele Scirè1, Roberto Macaluso1, Mauro Mosca1
1Department of Engineering, University of Palermo, Viale delle Scienze, Ed. 9, Palermo 90128, Italy.
概括
这项研究分析了用于无兴奋剂太阳能电池的和氧化薄膜. 发现氧气空缺会导致S形电流-电压曲线,影响性能.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 可再生能源可再生能源是可再生能源.
背景情况:
- 使用过渡金属氧化物 (TMO) 进行孔选择性接触,为无兴奋剂的异质连接太阳能电池提供了一条道路.
- 由于S形电流-电压 (J-V) 曲线阻碍了TMO的广泛采用,从而降低了设备的性能.
研究的目的:
- 研究氧气空缺对氧化和氧化薄膜的电性能的影响.
- 了解S形J-V曲线中缺陷对异质连接太阳能电池的作用.
主要方法:
- 对MoOx和WOx薄膜的光学和电子性能进行了全面的分析.
- 使用光热偏移光谱 (PDS) 评估缺陷密度.
- 结构和光学性能的实验性表征,包括原型太阳能电池制造和J-V测量.
主要成果:
- 氧化和氧化的薄膜在AM 1.5照明下表现出S形J-V特征.
- 氧气空缺显著影响电气性能,并有助于观察到的S形J-V曲线.
- 相当电路建模为太阳能电池原型的电气行为提供了洞察力.
结论:
- 优化沉积过程以控制氧气空缺对于改进基于TMO的异质连接太阳能电池至关重要.
- 了解缺陷行为是克服性能限制和推进无兴奋剂太阳能电池技术的关键.
- 这项研究为下一代太阳能电池开发高效的孔选择性接触提供了框架.
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