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Updated: Sep 15, 2025

Author Spotlight: Advancements in High-Performance Thermoelectric Thin Films Through Radio Frequency Magnetron Sputtering
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用于CMOS兼容热电设备的Epitaxial SiGeSn合金

Patrizio Graziosi1, Damiano Marian2, Andrea Tomadin2

  • 1CNR - ISMN, Via P. Gobetti 101, Bologna 40129, Italy.

ACS applied energy materials
|July 18, 2025
PubMed
概括

使用--锡 (SiGeSn) 合金的热电器件对绿色IT非常有希望. 这些材料在典型的芯片温度下达到1以上的功率 (ZT),从而实现高效的能量转换.

关键词:
博尔兹曼的运输方式这是一个CMOS系统.这是一个巨大的SIGESN.网格的热特性 网格的热特性热电学 热电学 热电学

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