面向工程的原子接口和芯片上的连续振幅调制回收使基于的铁电记忆具有超高耐久性
Dapeng Huang1,2, Hang Liu1,2, Houfang Liu1,2
1School of Integrated Circuits, Tsinghua University, Beijing 100084, China.
ACS nano
|July 21, 2025
概括
基于铁电哈夫尼亚的材料对先进的记忆器件显示出前途. 使用面工程电极和模块化恢复的新设计,通过减轻疲劳问题,显著提高了设备的耐用性和可靠性.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 电气工程 电气工程
背景情况:
- 基于铁电哈夫尼亚的材料对于下一代非易失性记忆和超越摩尔计算至关重要.
- 由界面电荷注入和氧气空缺引起的设备疲劳,限制了这些材料在重复电气循环下的弹性.
研究的目的:
- 开发一种全面的策略,以减轻 hafnium zirconate (Hf0.5Zr0.5O2) 内存阵列中的疲劳.
- 通过协同材料和电路设计,提高铁电记忆器件的耐用性和可靠性.
主要方法:
- 工程化 (TiN) 电极具有优选的面向和受控的表面氧化.
- 整合在芯片上的连续振幅调制恢复 (CAMR) 电路设计,用于氧气空位再分配.
- 使用组合方法制造和描述铁电内存电容器.
主要成果:
- 面设计的TiN电极有效地抑制了面接电荷注入和极化固定.
- 协同设计导致铁电电容具有高残余极化 (2P = 52μC/cm2) 和微不足道的唤醒效应.
- 设备表现出超高耐久度超过10~13个周期,表明出色的可持续性和可靠性.
结论:
- 面工程电极和CAMR的组合为Hf0.5Zr0.5O2内存阵列中的铁电疲劳提供了强大的解决方案.
- 这种协同设计为基于 hafnium 的铁电非挥发性内存的大规模集成和应用提供了可行的途径.
- 该研究强调了接口工程和电路联合设计对于推进高性能内存技术的重要性.
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