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Updated: Jul 29, 2026

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates
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铜纳米膜的超低电阻增强由立方化连贯接口的立方化连贯接口

Jiamiao Ni1, Naiqi Chen1, Boan Zhong1

  • 1State Key Lab of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.

ACS applied materials & interfaces
|July 21, 2025
PubMed
概括

研究人员开发了铜/立方化 (Cu/c-BN) 纳米膜,以改善微电子互连. 这种新材料显著降低了电阻,提高了稳定性,解决了小型化的关键局限性.

关键词:
化的化物 化Cu 互连连接 Cu 互连连接扩散屏障是一种扩散屏障.电阻电阻电力电阻的电阻.电子散射是一种电子散射.接口结构 接口结构

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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...