基于二维材料的闪存设备:机制,结构,应用
Xiangxiang Yu1,2, Langlang Xu1, Wenhao Shi1
1School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China. leiye@hust.edu.cn.
Materials horizons
|July 22, 2025
概括
二维 (2D) 材料为闪存设备提供了增强的性能. 本综述探讨了它们与浮式门和充电陷电池的整合,以提高速度,保留和耐久性.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 纳米技术纳米技术
背景情况:
- 传统的闪存 (NOR,NAND) 面临着性能限制.
- 浮式门和电荷陷晶体管是关键的记忆细胞结构.
- 2D 材料为克服这些挑战提供了一个有希望的替代方案.
研究的目的:
- 审查将二维材料集成到闪存中的情况.
- 为了突出性能提升程序/删除速度,数据保留和耐久性.
- 探索多功能应用和未来的研究方向.
主要方法:
- 审查现有的关于闪存内存中的二维材料集成的文献.
- 对浮式门和充电陷电池的性能改进进行分析.
- 对像神经形态计算这样的新型应用的光电子特性进行讨论.
主要成果:
- 2D 材料显著改善了闪存性能指标.
- 原子薄的性质和优越的电特性是关键的优势.
- 机遇存在于多功能设备,包括神经形态计算.
结论:
- 2D 材料为高性能,可扩展的闪存提供了一条途径.
- 挑战包括材料统一性,CMOS兼容性和EDA适应性.
- 未来的研究应该专注于克服实际实现的局限性.
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