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最近关于h-BN中中子辐射点缺陷的进展,用于量子应用

Shantanu Saha1, Shrivatch Sankar2, Shamsul Arafin2

  • 1Department of Electrical, Electronics and Communication Engineering, GITAM School of Technology, GITAM (Deemed to be University), Hyderabad, Telangana 502329, India.

Nanotechnology
|July 22, 2025
PubMed
概括

中子辐射在六角化 (h-BN) 中产生量子点缺陷,使基于旋转的量子传感器成为可能. 这项研究强调了先进量子应用的挑战和改进.

关键词:
酸的空缺位置h-BNBN 在线阅读中子辐射辐射中子辐射.处理量子信息的过程.量子点缺陷是一种量子点缺陷.量子传感是一种量子感应.

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