相关实验视频

Updated: Sep 14, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.6K

在涂上石墨烯的4H-SiC表面中调性兴奋剂和光电子调制

Masoud Mansouri1, Fernando Martín1,2, Cristina Díaz3

  • 1Departamento de Química, Módulo 13, Universidad Autónoma de Madrid, Madrid 28049, Spain.

The journal of physical chemistry. C, Nanomaterials and interfaces
|July 23, 2025
PubMed
概括

碳化 (SiC) 表面使纳米电子技术中的半导体石墨烯成为可能. 在SiC上的石墨烯具有可调节的电子和光学特性,非常适合先进的技术应用.

更多相关视频

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K
Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

6.5K

相关概念视频

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
484