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Updated: Sep 14, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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退化多V0.25Mo0.75S2的接口工程,用于改善MoS2场效应晶体管中的接触

Dipak Maity1, Rajesh Kumar Yadav2, Adi Levi2

  • 1Materials & Interface Engineering Laboratory, Tata Institute of Fundamental Research, Sy No 36/P Serilingampally Mandal, Hyderabad, 500046, India.

Small methods
|July 23, 2025
PubMed
概括

使用合金V0.25Mo0.75S2的2D半导体的接触工程显著降低了MoS2晶体管中的肖特基屏障高度. 这一突破提高了下一代电子产品的设备性能和可扩展性.

关键词:
斯科特基屏障高度 (SBH) 是联系工程 联系工程接触电阻模型的模型过渡金属二甲基化物 (TMDs) 过渡金属二甲基化物晶圆尺度增长的增长方式

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Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials04:57

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