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Updated: Aug 1, 2026

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
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Published on: July 17, 2015

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在III-化物表氧中,二维缓冲破裂基质极限在III-化物表氧

Yimeng Sang1,2, Xiangming Xu3, Ying Wu1

  • 1School of Integrated Circuits, Nanjing University, Suzhou 215163, China.

Science advances
|July 23, 2025
PubMed
概括

研究人员开发了一种新的表层氧化方法,在无形二氧化基板上生长单晶化 (GaN) 薄膜. 这一突破使新的半导体设备能够通过克服以前的基板限制来实现.

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Phase Transitions: Melting and Freezing

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