接口粗度相关性对共振道二极管变异的影响
Pranav Acharya1, Naveen Kumar1, Ankit Dixit1
1James Watt School of Engineering, University of Glasgow, Glasgow, G12 8QQ, UK.
Scientific reports
|July 23, 2025
概括
在纳米电子模拟软件 (NESS) 中改进的接口粗度 (IR) 模型揭示了共振道二极管 (RTD) 中更高的设备变化. 用两个相关长度模拟IR对于准确的RTD研究至关重要.
科学领域:
- 半导体设备物理学 半导体设备物理
- 计算材料科学 计算材料科学
- 纳米电子学纳米电子学
背景情况:
- 接口粗度 (IR) 显著影响纳米电子设备的性能.
- 在共振道二极管 (RTD) 中对IR的现有模型可能无法完全捕捉到表面形态的复杂性.
- 准确的IR模拟对于预测和优化RTD行为至关重要.
研究的目的:
- 在纳米电子模拟软件 (NESS) 中引入和评估一个改进的接口度 (IR) 模型.
- 为了研究异型红外的影响,考虑两个垂直的相关长度,在RTD设备变化.
- 量化之前和改进的IR模型之间的设备变化差异.
主要方法:
- 使用纳米电子模拟软件 (NESS) 进行了先前和改进的IR模型.
- 模拟共振道二极管 (RTDs) 具有不同的相关长度 (2.5nm到10nm) 的IR.
- 使用共振峰值电流和偏移电压与电流电压特征的标准偏差量化设备变化.
主要成果:
- 改进的红外模型显著增加了设备变化,标准偏差从6.2mV和9nA上升到24.2mV和34.7nA,对于5nm的相关长度.
- 随着两种模型的相关长度从2.5nm增加到10nm,设备变化大约翻了一番.
- 不同类型的相关长度研究显示了标准偏差的进一步变化,突出显示了模型的灵敏度.
结论:
- 改进的IR模型,结合了两个相关长度,提供了一个更现实的RTD行为表示.
- 准确模拟具有异型性质的IR对于未来的RTD研究和开发至关重要.
- 对于精确的纳米电子设备模拟,NESS的增强型IR模型至关重要.
关键词:
接口粗度 (IR) 接口粗度 (IR) 接口粗度 (IR) 接口粗度 (IR) 接口粗度 (IR) 接口粗度 (IR) 接口粗度 (IR) 接口粗度 (IR) 接口粗非平衡的绿色函数 (NEGF)响应道二极管 (RTD) 是一种响应道二极管.更多相关视频
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