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Updated: Sep 14, 2025

Preparation of ZnO Nanorod/Graphene/ZnO Nanorod Epitaxial Double Heterostructure for Piezoelectrical Nanogenerator by Using Preheating Hydrothermal
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Preparation of ZnO Nanorod/Graphene/ZnO Nanorod Epitaxial Double Heterostructure for Piezoelectrical Nanogenerator by Using Preheating Hydrothermal

Published on: January 15, 2016

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不对称的α/β-GaO3异相连接用于增强的压电催化

Chang-An Zhou1, Rui Zhong1,2, Yu Wu1

  • 1Low-Carbon Technology and Chemical Reaction Engineering Laboratory, School of Chemical Engineering, Sichuan University, Chengdu 610065, China. kuima@scu.edu.cn.

Chemical communications (Cambridge, England)
|July 24, 2025
PubMed
概括

研究人员设计了一种高度活性的晶体氧化物 (Ga2O3) 焦催化剂. 这种催化剂采用独特的α/β-GaO异相连接,以增强超声波振动下的电子转移.

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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

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相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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