Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

483
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
483
Mechanically-gated Ion Channels01:12

Mechanically-gated Ion Channels

6.7K
Mechanically-gated ion channels are proteins found in eukaryotic and prokaryotic cell membranes that open in response to mechanical stress. Tension, compression, swelling, and shear stress can alter the conformation of the protein, opening a transmembrane channel that allows the passage of ions for signal transmission. In eukaryotes, mechanically-gated channels are distributed in several regions like the neurons, lungs, skin, bladder, and heart, where they play critical roles in numerous...
6.7K
Switching of BJT01:22

Switching of BJT

503
Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
503
MOSFET01:16

MOSFET

581
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
581
Electro-mechanical Systems01:19

Electro-mechanical Systems

1.2K
Electromechanical systems are intricate configurations that effectively combine electrical and mechanical elements to achieve a desired outcome. Central to many of these systems is the DC motor, a device that converts electrical energy into mechanical motion, enabling various applications ranging from simple fans to complex robotic mechanisms.
A key component of the DC motor is the armature, a rotating circuit positioned within a magnetic field. As an electric current passes through the...
1.2K
Characteristics of MOSFET01:17

Characteristics of MOSFET

503
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
503

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Unmet needs of patients with cancer undergoing radiotherapy in Korea: A qualitative study.

European journal of oncology nursing : the official journal of European Oncology Nursing Society·2026
Same author

Evolution of treatment patterns and survival outcomes in non-metastatic rectal cancer: a 15-year real-world single-center analysis.

BMC cancer·2026
Same author

Cold-spot driven local failure after stereotactic body radiation therapy for colorectal liver metastases.

Frontiers in oncology·2026
Same author

Proton beam therapy with or without transarterial chemoembolization for hepatocellular carcinoma: a propensity score matching analysis.

The British journal of radiology·2026
Same author

Thermally Modulated Specular Phonon Transport in a High-Debye-Temperature Diamond Nanobeam.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same author

Tailored proton beam therapy for hepatocellular carcinoma: Addressing unmet needs through a multidisciplinary approach.

European journal of cancer (Oxford, England : 1990)·2026

相关实验视频

Updated: Sep 14, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K

纳米机械开关向电子转机操作.

Donggeun Lee1, Seung-Woo Jeon1, Sang-Wook Han1,2,3

  • 1Center for Quantum Technology, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.

Nano letters
|July 24, 2025
PubMed
概括

我们开发了一个纳米机械旋转,用于精确的电子传输控制. 它独特的敲击反应证明了纳米电机系统的线性运行,为先进的纳米电子设备铺平了道路.

关键词:
殴打 殴打 殴打 殴打电子运输是一种电子运输.纳米电机系统纳米电机系统.纳米机械旋转

更多相关视频

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens
07:15

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Published on: June 2, 2017

9.3K
High-Speed Magnetic Tweezers for Nanomechanical Measurements on Force-Sensitive Elements
08:50

High-Speed Magnetic Tweezers for Nanomechanical Measurements on Force-Sensitive Elements

Published on: May 12, 2023

2.3K

相关实验视频

Last Updated: Sep 14, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K
A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens
07:15

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Published on: June 2, 2017

9.3K
High-Speed Magnetic Tweezers for Nanomechanical Measurements on Force-Sensitive Elements
08:50

High-Speed Magnetic Tweezers for Nanomechanical Measurements on Force-Sensitive Elements

Published on: May 12, 2023

2.3K

科学领域:

  • 纳米电子机械系统 (NEMS) 是
  • 量子电子学 量子电子学
  • 固态物理 固态物理

背景情况:

  • 由于非线性和环境敏感性,NEMS中的线性控制具有挑战性.
  • 现有的方法在纳米级的高保真电流调制方面扎.

研究的目的:

  • 介绍一款用于机械调节电子传输的新型纳米机械旋转.
  • 通过独特的敲击响应来证明设备的精确和线性操作.

主要方法:

  • 用电子岛制造悬挂式悬架.
  • 电子传输特征的实验测量.
  • 用于信号验证的有限元建模.

主要成果:

  • 已经证明了共振调节的导电量和极性依赖的切换.
  • 观察到明显的跳动反应,表明线性操作.
  • 通过控制实验和模拟来验证观察到的信号的机械起源.

结论:

  • 纳米机械旋转为高保真电流调节提供了一个坚固的平台.
  • 观察到的跳动响应是NEMS中精确,线性控制的标志.
  • 单个电子水平操作的潜力,进一步优化和降低温度.