构建层次的C/MoS2纳米带,用N-化碳包裹,以实现高性能/储存

Bingqing Ye1, Xingke Cai2, Ruo Zhao2

  • 1College of Civil and Transportation Engineering, Shenzhen University, Shenzhen 518060, Guangdong, China; Institute for Advanced Study, Shenzhen University, Shenzhen 518060, Guangdong, China.

概括

研究人员开发了N-doped碳涂层C/MoS2纳米带,用于先进的能量存储. 这种等级结构提高了离子电池和离子电池的导电性和稳定性.