通过离子辐射以可控的方式精确调节Skyrmion密度
Yue Hu1, Senfu Zhang2, Yingmei Zhu3
1School of Materials and Energy, Electron Microscopy Centre of Lanzhou University and Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, P. R. China.
ACS applied materials & interfaces
|July 25, 2025
概括
离子辐射通过产生缺陷,显著增加了多层膜中的磁性 skyrmion 密度. 这种可控制的方法提高了用于先进的自旋电子设备和磁性内存应用的斯基米子密度.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
背景情况:
- 磁性 skyrmions 是受拓保护的旋转纹理,有可能用于旋转器件.
- 可控制的 skyrmion 密度对于高密度的磁性记忆和自旋电子学至关重要.
研究的目的:
- 通过使用离子辐射来证明特定地点对磁性 skyrmion 密度的控制.
- 为了研究离子辐射诱导的 skyrmion 密度增加背后的机制.
主要方法:
- 磁性多层薄膜的 (Ga+) 离子辐射.
- 扫描传输电子显微镜 (Cs-STEM) 用于成像.
- 微磁模拟来分析斯基尔米翁的行为.
主要成果:
- 在Ga+辐射剂量为1.5 × 10^14 Ga+/cm^2.2的情况下,获得了五倍的 skyrmion 密度.
- 离子辐射减少了创建 skyrmion 所需的磁场.
- 由于辐射而形成的障碍降低了斯基米翁核化能量屏障.
结论:
- 离子辐射提供了一种可控制的方法,用于特定地点增强磁性 skyrmion 密度.
- 这种技术适用于磁性存储器和自旋电子技术的工业应用.
- 这些发现代表了向磁性 skyrmions的实际应用迈出的重要一步.
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