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在CrSBr中对磁电阻和磁性异位性进行应变工程

Eudomar Henríquez-Guerra¹, Alberto M Ruiz², Marta Galbiati²

¹BCMaterials, Basque Center for Materials, Applications and Nanostructures, Leioa, 48940, Spain.

Advanced materials (Deerfield Beach, Fla.)

|July 25, 2025

概括

压缩应变增强了2D磁性半导体中的磁电阻和磁性异性质,如CrSBr. 这种应变工程方法对于开发先进的自旋电子和数据存储技术至关重要.

科学领域:

凝聚物质物理学凝聚物质物理学
材料科学材料科学材料科学
纳米技术纳米技术

背景情况:

定制2D磁性材料的磁性和传输特性是下一代电子产品的关键.
应变工程提供了一种多功能方法来调整2D系统中的磁性.

研究的目的:

为了研究压力双轴应变对少数层硫化 (CrSBr) 的磁阻力和磁性异性质的影响.
探索应变工程的潜力,以优化2D磁性材料的技术应用.

主要方法:

几层的CrSBr片被通过聚合物基质的热压缩对压缩双轴应变进行了压缩.
使用温度依赖的拉曼光谱法来确认菌株转移.
进行了磁传输测量,以量化磁阻和磁性异质变化的变化.
用第一原则计算来理解底层的物理机制.

主要成果:

压缩应变显著提高了CrSBr片的磁阻比和和场.
沿磁性轻轴观察到磁电阻的两倍增强.
尼尔温度在应力下略微下降约10K.
计算证实了压力诱导的层间交换合和磁性异构性能量的变化.

结论:

应变工程是一种有效的策略,用于精确控制2D磁性半导体中的磁传输特性.
通过应变工程优化CrSBr显示出对自旋电子和信息存储设备的承诺.
这项工作强调了在设计功能性二维磁性材料时应变的重要性.

关键词:

在CrSBrBr中使用.磁性二维材料是二维材料.磁性异质性是一种磁性异质性.磁电阻是指磁电阻的电阻.应变工程是一种应变工程.

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