一种新型的高耐久性HZO FeFET,在门氧化物中插入单层石墨烯
Liang Chen1, Runteng Zhu1, Xin Gao2
1School of Integrated Circuits, Peking University, Beijing, 100871, China. ruhuang@pku.edu.cn.
Nanoscale
|July 25, 2025
概括
基于氧化 (HfO2) 的铁电场效应晶体管 (FeFET) 使用插入的石墨烯 (GR) 显示出超过10^8个循环的耐久性. 这一突破为下一代嵌入式内存应用程序增强了FeFET.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 纳米技术纳米技术
背景情况:
- 基于氧化 (HfO2) 的铁电场效应晶体管 (FeFET) 的耐久性有限,这限制了它们的实际应用.
- 铁电领域工程对于提高FeFET性能至关重要.
研究的目的:
- 为了提高基于HfO2的FeFET的耐用性.
- 探索单层石墨烯 (GR) 在FeFET门堆中的新型应用,以提高设备性能.
主要方法:
- 以HfO2为基础的FeFET的制造,其中一个单层石墨烯 (GR) 层插入到门氧化物中.
- 通过实验测试对设备耐用性和门泄漏的表征.
- 分析铁电域行为和门堆内电场分布的分析.
主要成果:
- GR-FeFET (GR-FeFET) 的耐久性超过10^8个周期,比传统的FeFET提高了两个数量级.
- 引入GR增加了铁电领域,并减少了整个接口层 (IL) 的电场.
- 单层GR有效地抑制了充电注入,减少了门泄漏.
结论:
- 在基于HfO2的FeFET中插入石墨烯显著提高了设备的耐用性,并抑制了门泄漏.
- 对于下一代嵌入式内存技术来说,GR-FeFET是一个有前途的解决方案.
- 这项工作建立了铁电领域工程的新战略,以提高FeFET的性能.
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