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Updated: Sep 13, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Published on: November 24, 2016

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在GaN-on-Diamond高电子流动性晶体管中的接口驱动电热降解

Huanran Wang1, Yifan Liu1, Xiangming Dong1

  • 1Institute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, Shanghai 200051, China.

Nanomaterials (Basel, Switzerland)
|July 25, 2025
PubMed
概括

在GaN-钻石接口的热极限电阻显著影响GaN高电子流动性晶体管 (HEMT). 优化接口质量对于有效的热管理和提高设备性能至关重要.

关键词:
电子流动性退化 电子流动性退化传热传热传热传热传热传热传热传热高电子流动性晶体管高电子流动性晶体管自己加热效应的自热效应.热边界电阻的热极限电阻

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