Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

MOS Capacitor01:25

MOS Capacitor

973
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
973

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Opposing Estrous Cycle-Dependent Norepinephrine and Dopamine Regulation in Response to Methamphetamine.

Journal of neurochemistry·2026
Same author

Publisher Correction: Ultralow-voltage electrochemical organic light-emitting transistors with pinned and wide lateral recombination.

Nature materials·2026
Same author

Large Thermo- and Mechanosalient Actuation via Cooperative Twist Elasticity-Induced Packing Motif Conversion.

Journal of the American Chemical Society·2026
Same author

Halide-site-substituting spacer creates quasi-two-dimensional perovskites for vapour-deposited light-emitting diodes.

Nature nanotechnology·2026
Same author

Aqueous Fe-Based Batteries: From Fe-Metal Anode Reversibility to Electrolyte Stabilization and Cathode Expansion.

ChemSusChem·2026
Same author

Physical Unclonable Function Based on 3D-NAND Flash Array Structure With Multi-Chip Implementation.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same journal

A pH-Tolerant Nickel-Vanadium Phosphonate Framework for Stable Aqueous Supercapacitor Cycling.

ACS nano·2026
Same journal

Reconfigurable Photoelectric Coaxial Fiber-Based Memristors for Neuromorphic Computing.

ACS nano·2026
Same journal

Multidimensional Emission Control of CsPbI<sub>3</sub> Quantum Dots Using Plasmonic Quasi-Bound States in the Continuum.

ACS nano·2026
Same journal

Reconfigurable 2D Floating-Gate Field-Effect Transistors with Graphene-Induced Interfacial Polarization for Unified Memory-Logic Integration.

ACS nano·2026
Same journal

Bioinstructive Hybrid Scaffold Integrating Phosphoinositide 3-Kinase-Akt and Complementary Survival Pathways for Kidney Regeneration.

ACS nano·2026
Same journal

Robust Quantum Cutting via Halide-Bearing Ligand Passivation and Gradient Halide Reconstruction for Ultrabroadband Ultraviolet-to-Near-Infrared Photodetection and Imaging.

ACS nano·2026
查看所有相关文章

相关实验视频

Updated: Sep 13, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K

物理非克隆功能与3D堆叠的memristor交叉条数组使用自我差异对.

Jinwoo Park1, Hyungjin Kim1

  • 1Division of Materials Science and Engineering and Department of Semiconductor Engineering, Hanyang University, Seoul 04763, Korea.

ACS nano
|July 28, 2025
PubMed
概括
此摘要是机器生成的。

研究人员开发了一种3D堆叠的memristor交叉杆阵列,用于物理非克隆功能 (PUF). 这个新的设备使用自我差异配对来创建一个强大的随机源,增强加密安全性.

关键词:
3D堆叠的横条数组数组.硬件安全 硬件安全 硬件安全纪念馆是为了纪念.不易挥发的记忆 无易挥发的记忆物理不可克隆的功能 (PUF)自差异对的自我差异对.

更多相关视频

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.9K
A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

9.0K

相关实验视频

Last Updated: Sep 13, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K
Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.9K
A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

9.0K

科学领域:

  • * 固态设备物理学和材料科学.
  • * 先进的半导体制造技术.
  • *信息安全和密码学.

背景情况:

  • * 物理非克隆功能 (PUF) 对于硬件安全至关重要,它依赖于独特的设备变体进行身份验证.
  • * 传统的PUF在实现足够的和对抗攻击的强度方面面临挑战.
  • * 记忆器技术为新型安全应用提供了有前途的非易失性内存和独特的设备特性.

研究的目的:

  • *为了演示一个具有自我差异配对机制的3D堆叠的memristor交叉杆阵列.
  • * 使用这个数组作为物理非克隆函数 (PUF) 的随机源.
  • * 评估拟议的PUF芯片的性能,稳定性和安全性.

主要方法:

  • *使用后端线路工艺制造一个2 × 32 × 32 3D堆叠的memristor交叉杆阵列.
  • *对2048 memristor设备的电开关特性进行实验验证.
  • * 实施一种使用基尔霍夫当前定律感知当前差异的自我差异配对机制.

主要成果:

  • *成功演示了3D记忆器阵列中的自我差异配对机制.
  • * 提取设备对设备的变化作为PUF的随机源.
  • * 实现了大约6×1019的挑战响应对 (CRP) 空间,并证明了可重配置性.
  • *使用NIST测试套件和机器学习攻击模拟验证了稳定性和随机性.

结论:

  • * 3D堆叠的memristor交叉杆阵列与自我差异配对为PUFs提供了一个高度有效的随机源.
  • * 这种方法通过提供大量的CRP空间和可重配置性,显著提高了加密安全性.
  • * 经过验证的对复杂攻击的稳定性强调了这项技术在安全硬件应用中的潜力.