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Updated: Jun 7, 2026

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间接桥接的范德瓦尔斯接口,使得堆叠无缺陷,层对层的Epitaxy成为可能

GunWoo Yoo1,2, TaeJoon Mo1,2, Yong-Sung Kim3

  • 1Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea.

ACS nano
|July 29, 2025
PubMed
概括

研究人员开发了一种方法,使用 (Mo) 间位物生长稳定的单晶双层二硫化物 (MoS2). 这种技术可以防止缺陷,并确保先进电子应用的精确堆叠.

关键词:
两层之间的共价桥梁.它们是间歇性.层层地进行表层性表层氧化.没有错误的堆叠.范德瓦尔斯的材料

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