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Updated: Sep 13, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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损坏机制分析高场应力在cascode GaN HEMT电源设备上的高场应力

Shuo Su1,2, Yanrong Cao1,2, Weiwei Zhang1,2

  • 1School of Electronics & Mechanical Engineering, Xidian University, Xi'an 710071, China.

Micromachines
|July 30, 2025
PubMed
概括

处于非状态的GaN HEMT电源设备中的高场应力会导致物质损坏和充电陷. 这项研究揭示了影响设备可靠性和在恶劣环境中的性能的降解机制.

关键词:
Cascode GaN HEMT 电源装置的电码 GaN HEMT 电源装置的电源装置的电源装置的电量噪音 噪音 噪音 噪音在州外的高场应力压力场.

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