双面制造低泄漏电流通透线路 (TSVs) 具有高阶覆盖线路/屏障层
Baoyan Yang1, Houjun Sun1, Kaiqiang Zhu1
1School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
Micromachines
|July 30, 2025
概括
一种用于制造透维亚 (TSV) 的新方法简化了制造过程,并提高了稳定性. 这种低成本的方法增强了先进电子产品的3D集成.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体制造业 半导体制造业
背景情况:
- 传统的通过 (TSV) 制造面临着复杂性,成本和化学机械抛光 (CMP) 过程中铜 (Cu) 污染的挑战.
- 盲目制造工艺特别容易受到Cu污染,影响设备的稳定性和可靠性.
- 为了实现TSV的结构完整性,实现符合规格的层和屏障层沉积至关重要.
研究的目的:
- 提出一种使用穿孔结构的新,低成本和低复杂的TSV制造策略.
- 通过减轻传统方法固有的Cu污染问题来提高TSV稳定性.
- 为了展示一个无空气的Cu填充技术,以提高TSV性能.
主要方法:
- 采用双面层沉积,屏障层/种子层形成,以及Cu电,以简化工艺流程.
- 使用多阶段双向电技术,用于无空隙的铜填充.
- 制造的TSV具有很高的步骤覆盖率 (>80%),用于内和屏障层.
主要成果:
- 与传统工艺相比,实现了显著简化的TSV制造.
- 在CMP期间消除Cu污染,增强TSV稳定性.
- 通过先进的电,证明了无空气的Cu填充.
- 制造的TSV在20V时表现出超低泄漏电流135fA.
结论:
- 拟议的透孔TSV制造策略提供了一个具有成本效益和简化的制造解决方案.
- 这种方法通过防止Cu污染,提高了TSV的稳定性和可靠性.
- 开发的技术对推进异质系统中的3D集成具有前途.
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