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在6.5kV的SiC沟门p通道超连接绝缘门双极晶体管上进行模拟研究

Kuan-Min Kang¹, Jia-Wei Hu¹, Chih-Fang Huang¹

¹Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30010, Taiwan.

|July 30, 2025

概括

这项研究介绍了为6.5kV碳化p通道隔热门双极晶体管 (p-IGBTs) 的超连接结构. 这种新的设计显著改善了向前传导和切换性能,提高了高压应用的效率.

科学领域:

电力电子电力电子电力电子
半导体设备半导体设备
材料科学材料科学材料科学

背景情况:

碳化 (SiC) 沟门p通道绝缘门双极晶体管 (p-IGBT) 对于高压应用至关重要.
传统的设计面临性能和效率的局限性.
超连接 (SJ) 结构为增强设备特性提供了潜力.

研究的目的:

为了研究在6.5kV的SiC沟门p-IGBT中新型超级连接结构的性能.
将拟议的SJ结构与传统设计进行比较.
分析n-shield和n-pillar配置对设备性能的影响.

主要方法:

为了建模和分析SiC p-IGBT设备,我们使用了Sentaurus TCAD模拟.
超连接浮屏 p-IGBT (SJFS-p-IGBT) 和超连接接接地屏 p-IGBT (SJGS-p-IGBT) 与常规平面门 p-IGBT (CP-p-IGBT) 和常规浮屏 p-IGBT (CFS-p-IGBT) 的比较.
对前导电压 (V_F),关机时间 (t_off) 和关机能量 (E_off) 的分析.

主要成果:

与CP-p-IGBT相比,SJFS-p-IGBT显示了V_F的47%的改善,与CGS-p-IGBT相比,它显示了15%的改善.
与CFS-p-IGBT相比,SJGS-p-IGBT在t_off中显示了15%的改善.
在SJFS-p-IGBT展示了V_F和E_off之间的优越权衡.
在高兴奋剂度和温度下观察到负温度系数,增加V_F.

结论:

超级连接结构显著提高了6.5千伏SiC沟门p-IGBTs的性能.
浮动屏蔽配置提供了卓越的向前传导,而接地屏蔽配置提高了切换速度.
拟议的SJ结构为开发更高效和更高性能超高压器件提供了可行的途径.
在高温下并行运行的设计指南是基于温度系数分析提供的.

关键词:

我们的IGBT IGBT 如果是SiC SiC 前向电压的前向电压.超级连接的超级连接沟大门的沟大门是什么意思关机时的能量损失是关机时的能量损失.

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