相关实验视频

Updated: Sep 13, 2025

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

基于离子迁移机制的高级包装BEOL中TDDB和LER效应的SPICE兼容降解建模框架

Shao-Chun Zhang^1,2, Sen-Sen Li³, Ying Ji³

¹Information Science Academy, China Electronics Technology Group Corporation, Beijing 100142, China.

|July 30, 2025

概括

半导体设备中的时间依赖介电分解 (TDDB) 是使用金属离子迁移进行建模的. 这种新的SPICE兼容模型准确地预测了设备的寿命,并结合了线边粗度以提高可靠性预测.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
半导体物理半导体物理

背景情况:

时间依赖的介电分解 (TDDB) 是半导体设备和先进包装中的关键故障机制.
在金属间介电层内的金属离子迁移是TDDB的主要驱动因素.
准确的建模对于预测设备寿命和可靠性至关重要.

研究的目的:

开发一种与SPICE兼容的模型,用于由金属离子迁移引起的TDDB降解.
将线边粗度 (LER) 的影响纳入降解模型.
通过计算过程变化来提高设备寿命预测的准确性.

主要方法:

基于金属离子迁移和导电线丝演变的物理学,开发了一个与SPICE兼容的模型.
该模型与数值结果对准确性进行了验证.
使用功率光谱密度 (PSD) 的过程变化模型被整合到量化LER效应中.

主要成果:

开发的模型准确地预测了在各种操作条件下 (电压,温度,结构) 的电阻变化和设备寿命.
通过PSD模型将LER纳入PSD模型可以显著提高预测寿命曲线的准确性.
该模型有效地捕捉了由于制造不均性的可靠性变化.

结论:

拟议的SPICE兼容模型为理解和预测TDDB退化提供了一个强大的框架.
LER显著影响设备的可靠性,其纳入模型对于准确的寿命预测至关重要.
这项工作为提高半导体设备和先进包装的可靠性提供了有价值的工具.

关键词:

在LER-SPICE模型中.与SPICE兼容的TDDB模型包装介电层是一种介电层.时间依赖的介电分解.

更多相关视频

The Effect of Charging and Discharging Lithium Iron Phosphate-graphite Cells at Different Temperatures on Degradation

The Effect of Charging and Discharging Lithium Iron Phosphate-graphite Cells at Different Temperatures on Degradation

Published on: July 18, 2018

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

相关概念视频

Modeling of Diode Reverse Characteristics

Modeling of Diode Reverse Characteristics

In electronic circuits, reverse-biased diode configurations are critical for regulating voltage levels. Zener diodes exploit the reverse breakdown phenomenon and exhibit a controlled breakdown at a specific Zener voltage (VZ). They are designed to maintain a constant voltage across their terminals and are commonly used for voltage regulation in circuits.
When a reverse voltage applied to a Zener diode exceeds its breakdown voltage, the diode enters the breakdown region. At this point, the...

Modeling of Diode Forward Characteristics

Modeling of Diode Forward Characteristics

Understanding the behavior of diodes when forward-biased is a fundamental aspect of electronic circuit design and analysis. This analysis primarily utilizes two models: the exponential diode model and the constant-voltage-drop model. The exponential model comes into play when the source voltage exceeds 0.5 volts, pushing the diode current to rise exponentially above the saturation current. This relationship is graphically depicted in the current-voltage (I-V) curve, illustrating the diode's...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...