一个多式CMOS读取IC用于SWIR图像传感器,具有双模式BDI/DI像素和柱平行双步单坡ADC
Yuyan Zhang1,2, Zhifeng Chen1, Yaguang Yang3
1School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
Micromachines
|July 30, 2025
概括
本研究引入了一种新的双模式模拟前端 (AFE) 短波红外 (SWIR) 图像传感器,通过在缓冲直接注入 (BDI) 和直接注入 (DI) 模式之间动态切换来优化性能. 这项创新平衡了先进的SWIR成像应用的功耗和信号质量.
科学领域:
- 电气工程和计算机科学
- 光电子和成像技术的技术.
背景情况:
- 短波红外 (SWIR) 图像传感器需要高效的模拟前端 (AFE) 电路以获得最佳性能.
- 现有的读出集成电路 (ROIC) 面临着注入效率,偏差稳定性和功耗之间的权衡.
- 直接注入 (DI) 提供低功率,但存在不稳定性,而缓冲直接注入 (BDI) 则在更高的功率成本下提高稳定性.
研究的目的:
- 为SWIR图像传感器提出和实施一种新的双模式CMOS模拟前端 (AFE) 电路.
- 通过混合式读出电路在ROIC中动态平衡注入效率和功耗.
- 为了提高模拟数字转换器 (ADC) 的信号噪声比 (SNR) 和线性.
主要方法:
- 开发了一种混合读出电路 (ROIC),具有动态切换的缓冲直接注入 (BDI) 和直接注入 (DI) 模式.
- 实现了使用像素内模式切换晶体管和低泄漏传输门的双模式注入架构.
- 集成了一个12位两步单路模拟到数字转换器 (TS-SS ADC),具有四个终端的比较器和动态参考电压补偿.
主要成果:
- 双模式ROIC成功地平衡了基于像素电流水平的注入效率和功耗.
- 通过减轻电荷泄漏和偏移,TS-SS ADC实现了更好的SNR和线性.
- 原型AFE采用0.18微米CMOS工艺制造,其动态范围为75.58dB,噪声为249.42μV,功耗为81.04mW.
结论:
- 拟议的双模式AFE电路有效地解决了SWIR图像传感器ROIC中的性能权衡问题.
- 混合式读出架构可实现自适应性操作,优化低噪声或低功耗条件.
- 这种设计为需要高性能和高效的SWIR成像系统提供了显著的进步.
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