改进了GaN HEMT的直流和射频特征,使用后壁和局部化屏障层
Shuxiang Sun1, Lulu Liu1, Gangchuan Qu1
1Zhumadian Key Laboratory of Novel Semiconductor Devices and Reliability, Huanghuai University, Zhumadian 463000, China.
Micromachines
|July 30, 2025
概括
这项研究引入了一种新的AlGaN/GaN HEMT结构,具有AlInGaN后壁和化屏障层. 这种设计显著提高了电子度,提高了先进电子设备的直流和射频性能.
科学领域:
- 半导体设备物理学 半导体设备物理
- 材料科学是一种材料科学.
- 电子工程 电子工程 电子工程
背景情况:
- 基于化 (AlGaN) 和化 (GaN) 的高电子移动性晶体管 (HEMT) 对于高频和高功率应用至关重要.
- 传统的AlGaN/GaN HEMT在电子封闭和密度方面面临限制,这影响了它们的性能.
- 提高直流和射频特性需要创新的结构修改.
研究的目的:
- 提出并研究一种新的AlGaN/GaN HEMT结构,以提高直流和射频性能.
- 分析AlInGaN后壁和合AlGaN屏障层对设备特性的影响.
- 与传统的AlGaN/GaN HEMT相比,量化性能提升.
主要方法:
- 使用设备模拟来研究拟议的结构.
- 这种新型结构包含一个Al0.7In0.15Ga0.15N的后壁层.
- 在门下面引入了一个N型局部合的AlGaN屏障层.
主要成果:
- AlInGaN的后壁层有效地限制了电子,增加了通道电子度.
- 合N型AlGaN屏障层进一步提高了电子密度.
- 与传统的HEMT相比,新型BD-HEMT显示和排水电流增加了24.8%,最大透导率提高了10.4%.
结论:
- 拟议的BD-HEMT结构显著改善了DC性能指标.
- 射频性能大大提高,截止和振荡频率显著增加.
- 新的结构设计为下一代AlGaN/GaN HEMTs提供了一个有前途的途径.
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