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一种分层的反式刻版法,考虑了通过梯度下降的优化和可制造性限制

Haifeng Sun^1,2,3, Qingyan Zhang^1,2,3,4, Jie Zhou^1,2,3,4

¹National Key Laboratory of Optical Field Manipulation Science and Technology, Chinese Academy of Sciences, Chengdu 610209, China.

|July 30, 2025

概括

这项研究引入了一种新的分辨率分层方法,以增强逆光刻技术 (ILT) 的优化. 该技术改进了梯度下降 (GD) 算法,防止局部最佳并确保复杂模式的可制造性.

科学领域:

* 半导体制造和微电子行业.
* 计算式光刻和光学工程.

背景情况:

* 逆光刻技术 (ILT) 使用梯度下降 (GD) 来提高光刻图像的真实性.
* GD,一种局部优化方法,由于系统的低通效应,难以处理复杂的模式,特别是在角区域,导致局部优化和过度优化缺陷.

研究的目的:

*为了提高基于GD的ILT算法的效率和准确性.
* 解决GD在优化复杂模式方面的局限性,特别是在角落地区.
* 确保通过ILT产生的口罩的可制造性.

主要方法:

* 提出了一种分辨率分层方法,在优化过程中将模式角的高频信息纳入.
* 实施了一个以转为灵感的目标重定位策略,以减轻GD的过度优化.
*采用可区分的顶帽和底帽操作,以提高口罩的制造能力和优化效率.

主要成果:

* 与现有的ILT优化技术相比,提出的方法显示了更高的优化效率.
*成功避免了通常与GD在复杂模式优化中相关的过度优化缺陷.
* 数值实验证实了分辨率分层方法的优越性和有效性.

结论:

*分辨率分层方法显著改进了基于GD的ILT算法,用于复杂的图案制造.
* 这种方法提供了一个强大的解决方案,可以提高光刻图像的可靠性,同时确保面具的可制造性.
* 这项工作为下一代半导体制造提供了计算光刻技术的宝贵进步.

关键词:

梯度下降算法梯度下降算法反向光刻技术的反向光刻技术.解决方案分层方法的分层方法.

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