相关实验视频

Updated: Sep 13, 2025

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
10:41

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Published on: May 31, 2018

8.9K

使用道结接触层和不对称极化诱导的兴奋剂电子阻断层的254nm DUV LED 的性能提升

Aoxiang Zhang, Jiayi Yao, Xien Sang

    Optics express
    |July 30, 2025
    PubMed
    概括

    这项研究引入了45纳米道连接接触层和不对称的极化诱导的兴奋剂电子阻断层,以改善深紫外线发光二极管 (DUV LED). 这些创新提高了孔注入和抑制电子泄漏,提高了设备的效率.

    更多相关视频

    Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes07:00

    Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

    Published on: June 25, 2020

    7.3K
    Integrating a Triplet-triplet Annihilation Up-conversion System to Enhance Dye-sensitized Solar Cell Response to Sub-bandgap Light11:26

    Integrating a Triplet-triplet Annihilation Up-conversion System to Enhance Dye-sensitized Solar Cell Response to Sub-bandgap Light

    Published on: September 12, 2014

    12.7K

    相关概念视频

    Biasing of P-N Junction01:16

    Biasing of P-N Junction

    The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
    In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
    878
    P-N junction01:11

    P-N junction

    A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
    684
    Schottky Barrier Diode01:27

    Schottky Barrier Diode

    Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
    498
    Biasing of Metal-Semiconductor Junctions01:27

    Biasing of Metal-Semiconductor Junctions

    Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
    In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
    335