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Crystal Growth: Principles of Crystallization01:25

Crystal Growth: Principles of Crystallization

2.6K
Crystallization is a phase transformation process in which crystals are precipitated from a supersaturated solution or formed from other sources. During crystallization, atoms or molecules arrange themselves into a well-defined, rigid crystal lattice to minimize energy.
Initiating crystallization involves manipulating the concentration of the solute and the temperature of the solution. Since crystal growth occurs when the ratio of concentration and solubility of the solute in the solvent...
2.6K

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Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition
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单晶生长和高缩酸的特征 ASiP2

Yasuyuki Iwabuchi1, Mingyu Xu2, Weiwei Xie2

  • 1Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States.

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概括

高工程创造了新的化物单晶,具有非线性光学潜力. 这些材料表现出独特的微观结构和光学特性,为材料科学开辟了新的途径.

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科学领域:

  • 材料科学 材料科学 材料科学
  • 固态化学 固态化学
  • 晶体学 晶体学是指结晶学.

背景情况:

  • 高材料具有可调节的特性.
  • 对于高的应用,第三级化物的探索较少.
  • MgSiP2 作为新型高化的基础.

研究的目的:

  • 为了合成和表征新的高化单晶.
  • 研究这些新型材料的结构和光学特性.
  • 探索高工程在化物系统中的潜力.

主要方法:

  • 应用到MgSiP2.2.的高工程.
  • 合成 (Mg,Zn,Cd,Mn) SiP2 (A4SiP2) 和 (Mg,Ca,Sr,Ba,Zn) SiP2 (A5SiP2) 单晶体.这些单晶体的合成方法是
  • 结晶生长的 Sb 流量方法.
  • 扫描电子显微镜与能量分散式X射线光谱学 (SEM-EDX) 进行组合分析.

主要成果:

  • 成功合成了A4SiP2和A5SiP2单晶体.
  • A5SiP2结晶成一个新的空间群 (I4̅2m),具有多个高位.
  • 在A5SiP2中具有 (Mg, Zn) SiP2核心和高的外的独特微观结构.
  • 无论是A4SiP2还是A5SiP2,都表现出光学第二波生成 (非线性光学响应).
  • 与母阶段相比,观察到带间隙缩小.

结论:

  • 在三元化物中,高工程是可行的.
  • 在A5SiP2.2中发现了一种新的晶体结构 (I4̅2m).
  • 合成的化物显示出作为非线性光学材料的前景.
  • 这项工作将高材料的范围扩展到化物领域.