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直接结合的6英寸. 具有增强热接口的SiC/Si晶圆

Szuyu Huang^1,2, Fachen Liu^2,3, Jiaxin Liu^2,3

¹International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.

ACS applied materials & interfaces

|July 30, 2025

概括

研究人员开发了一种表面激活粘合方法,以将碳化 (SiC) 与 (Si) 结合起来. 这一过程显著降低了接口热阻,改善了高级半导体应用的散热.

科学领域:

材料科学材料科学材料科学
半导体物理半导体物理
热力工程是热力工程中的一个.

背景情况:

基于的互补金属氧化物半导体 (CMOS) 技术在高温和高功率应用中存在局限性,原因是导热性差,带隙窄.
与宽带差半导体碳化 (SiC) 的异质集成提供了增强的热性能,但面临着直接结合导致的格子不匹配和接口氧化物层等挑战.

研究的目的:

为4H-SiC/Si异构结构开发一种高质量的制造方法.
克服SiC/Si集成现有粘合技术的局限性.
为了提高SiC/Si接口的热性能和散热.

主要方法:

采用了表面激活粘合 (SAB) 策略,与1000°C的受控后粘合回火相结合.
使用原子分辨率电子显微镜进行界面分析.
应用了亚纳米级的声子光谱和原子模拟来研究热性质.

主要成果:

实现了显著增强的粘合强度,并将界面热电阻 (ITR) 降低了高达~58%.
观察到无形中间层的缺失,以及在回火后在接口上形成1-1.5纳米厚的3C-SiC岛屿.
在6英寸的4H-SiC/Si晶片中显示出较低的ITR,表明改善了散热.

结论:

通过SAB的后结合回火策略,可以有效地制造出高质量的4H-SiC/Si异构结构.
3C-SiC岛屿的形成和中间层的缺失是提高机械和热性能的关键.
这项工作为SiC/Si集成的热接口工程提供了原子规模的洞察力.

关键词:

铜铜铜铜的铜.直接的晶圆粘合方式接口接口接口接口接口碳化是碳化的重要组成部分.热管理热管理

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