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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Updated: May 4, 2026

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

通过解决方案处理准备的高性能p型1D范德瓦尔斯电子产品.

Tianchao Guo¹, Xiangming Xu¹, Maolin Chen¹

¹Materials Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.

Advanced materials (Deerfield Beach, Fla.)

|July 30, 2025

概括

此摘要是机器生成的。

使用溶液处理的 (Te) 纳米线 (NW) 制造了高性能p型晶体管. 范德瓦尔斯 (vdW) 的Te NWs之间的交叉点对设备移动性产生了最小的影响,使大面积电子设备成为可能.

关键词:

高流动性的高流动性.大面积的大面积大面积在p型半导体中,p型半导体解决方案的过程解决方案的过程

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Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

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Last Updated: May 4, 2026

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

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Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

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科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
电子工程电子工程

背景情况:

基于解决方案的方法提供低成本,大规模的电子制造,但与高性能p型晶体管作斗争.
范德瓦尔斯 (vdW) 材料可以实现原子定义的接口,这对于有效的电荷传输和增强设备性能至关重要.

研究的目的:

通过使用溶液处理的 (Te) 纳米线 (NW) 来演示高性能p型晶体管.
调查vdW连接对基于Te NW的设备中的载体移动性的影响.
为实用电子应用制造Te NWs的大面积VDW薄膜.

主要方法:

使用单个 (Te) 纳米线 (NW) 制造晶体管.
设备性能的表征,包括移动性和当前开/关比.
准备和测试大面积的1D Te NWs vdW膜.

主要成果:

个别的Te NW晶体管实现了平均约370cm2V-1s-1.1的高流动性.
Te-Te NW 交叉点的移动性与单个 NW 相似,这表明由于 vdW 接触而导致的退化是微不足道的.
大面积的Te NW vdW薄膜产生的晶体管的平均孔移动性为≈94.9 cm2V-1s-1,下值摆动为≈248.6 mVdec-1,电流开/关比为≈104,低工作电压为1 V.

结论:

溶液处理的Te NW适用于高性能p型晶体管.
在Te NW网络中的vdW接口不会显著阻碍充电传输,从而使可扩展的设备制造成为可能.
这项工作为使用VDW材料的先进溶液加工电子产品铺平了道路.