在SbSexmemristors中发生异常相变,用于超快的图像加密.
Guangdong Zhou1, Dengshun Gu1, Jin Ye1
1College of Artificial Intelligence, Chongqing Key Laboratory of Brain-inspired Computing and Intelligent Chips, Key Laboratory of Luminescence Analysis and Molecular Sensors (Ministry of Education), Southwest University, Chongqing, 400715, China.
Advanced materials (Deerfield Beach, Fla.)
|July 31, 2025
概括
研究人员在SbSe$_{x}$薄膜中发现了一个异常的相位过渡,产生了独特的N形负差分电阻 (NDR) 效应. 这一突破使得使用有缺陷的memristors实现超快速图像加密.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 设备物理 设备物理
背景情况:
- 神经元中的复杂的电非线性对于高级认知至关重要.
- 开发具有类似丰富动态的电子设备是一个重要的技术目标.
研究的目的:
- 为了研究半导体SbSe$_{x}$薄膜中的异常相位过渡.
- 探索观察到的非线性电动力学在先进应用中的潜力.
主要方法:
- 在SbSe$_{x}$薄膜中现场观察相变.
- 结合Sb或Se空缺的理论模拟.
- 分析局部化的朱尔加热效应.
主要成果:
- 观察到一个异常的相位过渡,涉及无形到晶体的转变和前所未有的Sb金属核生长.
- 确定在空位附近局部化的朱尔加热会诱导异常相位过渡.
- 在有缺陷的memristors中表现出一种独特的N形负差分电阻 (NDR) 效应.
结论:
- 该研究揭示了SbSe$_{x}$中一个由空缺和局部加热驱动的新型相位过渡机制.
- 观察到的N形NDR效应为超快的图像加密提供了一个混乱的系统.
- 这项研究为相变电子和神经形态计算开辟了新的途径.
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