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Updated: Sep 13, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Published on: July 17, 2020

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移动边界截断网格方法应用于半导体设备模拟,在博尔兹曼-巴特纳格-格罗斯-克鲁克方程的框架内

Ming-Yu Li1, Chun-Yaung Lu2, Chia-Chun Chou1

  • 1National Tsing Hua University, Department of Chemistry, Hsinchu 300044, Taiwan.

Physical review. E
|August 1, 2025
PubMed
概括

一种新的截断网格方法有效地解决了用于半导体设备模拟的博尔兹曼-巴特纳格-格罗斯-克鲁克方程. 这种方法可以降低计算成本,同时准确模拟准弹道运输现象.

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Electrostatic Boundary Conditions in Dielectrics

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