在多晶-钻石结构中的晶体缺陷的原子层次表征
Yuxuan Yang1, Kaige Chen2, Xinlu Xue3
1State Key Laboratory for Mechanical Behavior of Materials, Electronic Materials Research Laboratory (Key Lab of Education Ministry), School of Electronic and Information Engineering, Xi'an Jiaotong University 710049 Xi'an China zhangyang2020@xjtu.edu.cn wuhaijunnavy@xjtu.edu.cn.
这项研究揭示了大型电子级多晶的原子级缺陷,识别了密集生和堆叠缺陷. 这些发现为提高多晶太阳能电池质量提供了基础.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 晶体学 晶体学是指结晶学.
背景情况:
- 电子级多晶对于半导体行业至关重要.
- 了解原子级晶体缺陷对于提高材料质量至关重要.
- 现有的表征方法在原子级缺陷分析方面存在局限性.
研究的目的:
- 提供大尺寸电子级多晶中晶体缺陷的原子级特征.
- 研究双胞胎的结构和形成以及堆叠故障.
- 为了阐明多晶性质缺陷的作用.
主要方法:
- 聚焦离子束 (FIB) 用于样品制备.
- 扫描电子显微镜-电子反射散射衍射 (SEM-EBSD) 用于微观结构分析.
- 异常校正传输电子显微镜 (AC-TEM) 用于原子级成像.
主要成果:
- 多晶芯表现出单晶结构与密集的双胞胎.
- 双胞胎形成在{111}平面上,起源于谷粒边界并延伸到谷粒.
- 双胞胎边界由原子不对齐的堆叠断层组成,失位导致扭曲和进一步断层形成.
结论:
- 原子级缺陷,包括双胞胎和堆叠缺陷,显著影响多晶结构.
- 了解这些缺陷为改善多晶质量提供了理论基础.
- 这些发现对于聚晶太阳能电池的发展至关重要.
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