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Updated: Sep 13, 2025

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
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结构优化的SiC CMOS FinFET用于高温和低功耗SoC逻辑集成

Tae Seong Kwon1,2, Young Jun Yoon3, Do Yeon Park1,2

  • 1Advanced Semiconductor Research Center, Power Semiconductor Research Division, Korea Electrotechnology Research Institute (KERI), Changwon, 51543, South Korea.

Scientific reports
|August 1, 2025
PubMed
概括

这项研究优化了用于高温二元逆变器的碳化 (SiC) FinFET. 新设计克服了SiC CMOS中的挑战,使高级逻辑系统能够稳定高温运行.

关键词:
二元逆变器二元逆变器这是一个CMOS系统.在FINFET的基础上.高温应用 高温应用自动加热,可以自动加热碳化 (SiC) 是一种碳化.

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