AcGaO3,,,:

Hudabia Murtaza1, Quratul Ain1, Abhinav Kumar2,3,4

  • 1Department of Physics, University of Management and Technology, Lahore, Pakistan.

概括

向AcGaO3施加压力会改变其电子带隙和物理性能. 这种带隙工程降低了材料的阻力,并改变了光学特性,使其适合光电子.