一个新的超的下值摆动iTFET,具有控制门和控制源偏差
Jyi-Tsong Lin1, Ruei-Cheng Tu2
1Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, 80424, Taiwan, R.O.C.. jtlin@ee.nsysu.edu.tw.
Scientific reports
|August 2, 2025
概括
我们开发了一种新的控制源和控制门绝缘道场效应晶体管 (CSCG-iTFET),用于更的下值摆动 (SS) 和高的ON状态电流. 这种装置结构使用Schottky接触器最大限度地减少了泄漏电流和热预算.
科学领域:
- 半导体设备物理学 半导体设备物理
- 通过先进的晶体管技术,实现了先进的晶体管技术.
- 材料科学用于电子产品.
背景情况:
- 道场效应晶体管 (TFET) 为低功耗电子产品提供了潜力,因为它们的下值波动 (SS) 与传统的MOSFET相比较.
- 在保持高ON状态电流 (ION) 和低OFF状态电流 (IOFF) 的同时,实现的SS仍然是TFET研究中的一个重大挑战.
- 现有的TFET结构经常面临性能限制,原因是兴奋剂复杂性和泄漏途径.
研究的目的:
- 提出和研究一种新的控制源和控制门结构隔热道场效应晶体管 (CSCG-iTFET).
- 为了实现前所未有的的下值摆动 (SS) 并保持高的ON状态电流 (ION).
- 减少泄漏电流和热预算,通过在源头使用无兴奋剂的Schottky接触.
主要方法:
- 四种不同结构的设备性能比较:传统的双门TFET与控制门,iTFET与控制门,iTFET与充电增强层和控制门,以及拟议的CSCG-iTFET.
- 使用Sentaurus TCAD进行模拟研究,使用校准模型和参考过程.
- 通过控制源的电压调节能力来研究积累层的增强.
主要成果:
- 拟议的CSCG-iTFET显示平均下值波动 (SSAVG) 为9.69mV/Dec,最低下值波动 (SSMIN) 为1.72mV/Dec. 这两种波动均为1.69mV/Dec.
- 在VD = 0.2V时实现了2.95 × 10-7 A/μm的ON状态电流 (ION).
- 获得了高的开启/关闭电流比 (ION/IOFF) 为3.84 × 109.
结论:
- CSCG-iTFET结构有效地实现了显著更的下值波动,同时保持了高的ON状态电流.
- 使用无兴奋剂的Schottky接触器成功地减少了泄漏电流和热预算.
- 通过优化制造流程,预计将进一步提高性能,突出显示这种新型设备架构的潜力.
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