色/红色丰富的InGaN双量子井的载体动力学和结构分析,由蓝色InGaN单量子井混合的LED混合
Hadeel A Alamoudi1, Nuaman M Kutty1, Fatimah Alreshidi1
1Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
Small (Weinheim an der Bergstrasse, Germany)
|August 4, 2025
概括
这项研究探讨了色/红色LED中的载体动力学,使用In-rich InGaN/GaN双量子井 (DQWs). 添加In-poor InGaN单量子井 (SQW) 的混合LED显示了提高效率和减少非辐射重组.
科学领域:
- 半导体物理 半导体物理
- 材料科学 材料科学 材料科学
- 光电学是指光电子产品.
背景情况:
- 基于InGaN/GaN量子井的长波长 (色/红色) 发光二极管 (LED) 面临着效率下降和量子受限的斯塔克效应等挑战.
- 了解富含InGaN结构中的载体动态对于开发高效的红色/色发射器至关重要.
研究的目的:
- 为了研究色/红色LED中的载体动态,使用In-rich InGaN/GaN双量子井 (DQWs).
- 为了比较混合LED结构的性能,将一个In-poor InGaN单量子井 (SQW) 与DQW相结合,与一个只有DQW的控制LED相比.
- 阐明结构缺陷和压力对载体行为和排放性能的作用.
主要方法:
- 混合和控制InGaN/GaN LED结构的制造和表征.
- 先进的结构分析,包括阴极光发光,以研究缺陷分布和材料组成.
- 使用取决于温度的光发光 (PL) 和时间分辨率的PL进行光学分析,以探测载体动态.
主要成果:
- 混合LED显示显著提高效率 (27.9%的内部量子效率) 与控制LED相比.
- 在In-rich色/红色LED中观察到不寻常的载体动态,包括在160-200 K之间发生的急剧能量转移和峰值宽度变化.
- 阴极光发光揭示了混合LED在V-pits/trenches周围的局部辐射,而控制LED显示了DQW损坏和缺陷以下的蓝色辐射.
- 在混合LED中观察到减少量子受限的Stark效应.
结论:
- 在混合LED结构中集成一个In-poor InGaN SQW有效地抑制非辐射重组,并充当载体储库.
- 混合结构减轻了线程位移附近的DQW损伤,从而提高了长波长化物发射器的性能.
- 这些发现为克服基于InGaN的红色/色LED技术的挑战提供了一条途径.
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