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Updated: Sep 12, 2025

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渐变气杂的memristor用于内存计算

Menglan Li1,2, Yangyu Dong1,2, Jiamin Tian3

  • 1Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.

Nano letters
|August 4, 2025
PubMed
概括

渐变兴奋剂 (GND) 增强了用于内存计算 (CIM) 的HfOx记忆器. 这种方法可以提高线性和统一性,从而实现可靠的数字和模拟应用.

关键词:
在内存中进行计算.导电性灯丝机制的导电性灯丝机制渐变氧兴奋剂的渐变.氧化甲氧化物是什么氧化物基的记忆器

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