随机网络碳纳米管薄膜晶体管中的个人接触电阻,考虑到不对称性质
Hanbin Lee1, So-Jeong Park1, Jeong Yeon Im1
1School of Electrical Engineering, Kookmin University, Seoul 02707, Republic of Korea.
Nanotechnology
|August 4, 2025
概括
本研究引入了一种新方法,用于准确测量碳纳米管薄膜晶体管 (CNT-TFT) 的接触电阻,这对于提高设备性能和理解它们的不对称性质至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 纳米技术纳米技术
背景情况:
- 碳纳米管薄膜晶体管 (CNT-TFT) 由于其优异的电气和机械性能,对高性能应用具有前景.
- 由于电荷载体运输特性,接触电阻对CNT-TFT性能产生重大影响.
- 现有的CNT-TFT接触电阻提取方法往往忽略了固有的设备不对称性.
研究的目的:
- 开发一种新的方法,用于准确地提取CNT-TFT中的个别接触电阻.
- 为了考虑在CNT-TFT中接触处的不对称特性和电压下降.
- 为了在不对称条件下实现准确的门电压和内在移动性提取.
主要方法:
- 在CNT-TFTs中提出了一种用于单个接触电阻提取的新方法.
- 考虑了有效的门偏差,反映了各个接触电阻之间的电压下降.
- 将提取的电阻与传统方法进行比较,并分析电压下降的影响.
主要成果:
- 拟议的方法准确地提取非对称的CNT-TFT中的个别接触电阻.
- 这种方法独立于接触电阻方法 (CRM),适用于大面积设备.
- 在消除接触电阻诱导的降解效应后,提取了内在的移动性.
结论:
- 开发的技术提供了一种可靠的方法,用于准确地描述,建模和模拟CNT-TFTs.
- 通过各种纯度的半导体CNT实现了单个接触电阻的可靠提取.
- 该方法通过考虑设备不对称性来解决先前研究的局限性.
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