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Updated: Sep 12, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

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在单层VSe2中以缺陷为媒介的相变和结构动力学.

Jinbang Hu1,2, Chaoqin Huang3, Lina Liu4

  • 1School of Physics and Electronics, Hunan University, Changsha 410082, China.

ACS applied materials & interfaces
|August 6, 2025
PubMed
概括

单层脱化物 (SL VSe2) 控制相位过渡中的缺陷. 控制这些缺陷允许对先进的2D范德瓦尔斯材料调整相位比.

关键词:
阿尔佩斯 (ARPES) 是一个名为"阿尔佩斯"的游戏.在STM中,STM是STM.一个缺陷介导的动力学.阶段过渡 阶段过渡瓦纳二二化物

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