.

Jimmy Weissert1, Adrian Christoph Ellinger1, Sebastian Höfener1

  • 1Institute of Physical Chemistry, Karlsruhe Institute of Technology (KIT), P.O. Box 6980, D-76049 Karlsruhe, Germany.

概括

我们开发了一种冷密度嵌入 (FDE) 方法,以准确地模拟2D材料中的极化,这对于理解有机半导体中的电荷迁移至关重要.

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